s mhop microelectronics c orp. a STS126 symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a ver 2.0 www.samhop.com.tw may,31,2012 1 details are subject to change without notice. w p d c -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c a t a =70 c w a a 1.4 5.3 1.25 g r e r r p p r p p o r r thermal characteristics 100 c/w thermal resistance, junction-to-ambient r ja a g d s sot-23 g d s
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 250 g fs s c iss 275 pf c oss 27 pf c rss 20 pf q g 8 nc 10.5 16 2.8 t d(on) 4.5 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =0.7a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =0.7a v ds =5v,i d =0.7a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 312 c f=1.0mhz c STS126 ver 2.0 www.samhop.com.tw may,31,2012 2 nc q gs nc q gd 0.96 1.4 gate-drain charge gate-source charge v ds =50v,i d =0.7a, v gs =10v drain-source diode characteristics and maximum ratings v ds =50v,i d =0.7a,v gs =10v v sd diode forward voltage v gs =0v,i s =0.7a 0.78 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ _ 1.0 1.6 2.5 1.8
STS126 www.samhop.com.tw may,31,2012 3 figure 1. output characteristics v ds , drain-to-source voltage (v) i d , drain current(a) figure 2. transfer characteristics v gs , gate-to-source voltage (v) 4.5 3.6 2.7 0.9 0 0 1 2 3 4 5 6 tj=125 c 1.8 25 c i d , drain current(a) i d , drain current (a) 600 500 400 300 200 100 0 1.2 2.4 3.6 4.8 6.0 0.1 0 25 50 75 tj( c) 150 100 125 tj, junction temperature ( c) vth, normalized gate-source threshold voltage tj, junction temperature ( c) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) -50 -25 0 25 50 75 100 125 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 r ds(on) , on-resistance normalized drain current and temperature figure 4. on-resistance variation with and gate voltage figure 3. on-resistance vs. drain current ver 2.0 4 3 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 5 v gs = 10v v gs =10v r ds(on) (m ) v gs =10v i d =0.7a v gs =3.5v v gs =4.5v 0.8 1.6 1.2 2.0 1.8 1.4 1.0 i d = 250ua 0.5 0 6 v gs =5v v gs =4v -55 c v ds =v gs i d = 250ua
STS126 www.samhop.com.tw may,31,2012 4 gate-source voltage figure 7. on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to source voltage(v) v gs , gate to source voltage (v) figure 10. gate charge qg, total gate charge(nc) ver 2.0 r ds(on) (m ) figure 12. maximum safe i d , drain current (a) v ds , drain-source voltage (v) operating area 0.1 1 10 100 1 0.1 0.01 r d s (on ) l i m it 600 500 400 300 200 100 0 0 1.0 0 0.4 0.8 1.2 1.6 2.0 125 c crss coss 300 250 200 150 100 50 0 10 15 20 25 30 0 5 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 110 100 0.1 1 10 td(on) t r td(off ) tf 10 i d =0.7a 10 8 6 4 2 v ds =50v i d = 0.7a 0 3 2 1 0 10 8 6 4 2 8 7 6 5 4 75 c 25 c 5.0 10.0 20.0 v gs = 10v single pulse t a =25c 1m s 1 0 ms 100m s dc ciss 10 u s 100us 10s 700 125 c v ds =50v,i d =0.7a v gs =10v 100 25 c 75 c
STS126 www.samhop.com.tw may,31,2012 5 ver 2.0 norm aliz ed transien t therma l r esis tance square wave pulse duration(sec) figure 13. normalized thermal transient impedance curve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 10 100 1000 t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datas heet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th p dm 1 single pulse 0.5 0.2 0.05 0.1 0.02 0.01
STS126 www.samhop.com.tw may,31,2012 6 package outline dimensions ver 2.0 sot 23 d e e1 e e1 b 1 2 3 l detail "a" millimeters inches symbols d e 2.700 3.100 2.200 3.000 e1 1.200 1.700 e e1 b 0.300 0.510 c 0.080 0.200 a a1 a a1 0.000 0.150 0.887 1.300 l1 l l1 0.600 ref. 0 o 10 o 0.106 0.122 0.087 0.118 0.047 0.067 0.019 0.020 0.003 0.008 0.000 0.006 0.035 0.051 0.024 ref. 0 o 10 o min max min max 0.850 1.150 0.033 0.045 1.800 2.100 0.071 0.083 0.450 ref. 0.018 ref. detail "a"
STS126 www.samhop.com.tw may,31,2012 7 ver 2.0 sot23 tape and reel data sot23-3l carrier tape sot23-3l reel 3.15 2 0.10 2.77 2 0.10 1.22 2 0.10 1.00 +0.05 1.50 +0.10 8.00 +0.30 -0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.22 2 0.04 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot23-3l a0 b0 k0 d0 d1 e e1e2p0 p1p2 t tr feed direction
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